s7199-01 s7199-01 is a family of fft-ccd image sensors specifically designed for x-ray imaging. a fos (fiber optic plate with scintillator) that converts x-ray into visible-light is mounted on the ccd chip, which enables s7199-01 to acquire the x-ray imaging. two ccd chips of symmetric from side to side are mounted closely for realizing the possible minimum dead space in between. the effective photosensitive length of about 150 mm in total is realized; each chip has 1536 128 pixels and the pixe l size is 48 48 m. even a x-ray image of moving object can be taken by taking a unique operation method of tdi, which can also be useful for a non-destructive inspection where the object moves on a belt conveyer. the each chip of s7199-01 has an effective pixel size of 48 48 m and is available in active area of 73.728 (h) 6.144 (v) m m 2 . fop type is also available (s7199-01f). features l 1536 (h) 128 (v) pixel format l pixel size: 48 48 m l buttable structure of 2 chips l coupled with fos for x-ray imaging l tdi (time delay integration) operation l 100 % fill factor l wide dynamic range l low dark signal l low readout noise l mpp operation applications l general x-ray imaging l non-destructive inspection l dental panorama image sensor ccd area image sensor front-illuminated fft-ccds for x-ray imaging selection guide type no. window cooling number of total pixels number of active pixels active area [mm (h) mm(v)] s7199-01 fos (fiber optic plate with scintillator) s7199-01f* fop (fiber optic plate) non-cooled 1536 128 1536 128 73.728 6.144 note) as an input window, fos is suited to s7199-01. * w hen this product is used for x-ray detection applications, the user should assemble a scintillator or phosphor sheet. general ratings parameter s7199-01 s7199-01f ccd structure full frame transfer or tdi fill factor 100 % number of active pixels 1536 (h) 128 (v) * 1 pixel size 48 (h) 48 (v) m ccd active area 73.728 (h) 6.144 (v) mm * 1 x-ray sensitive area 146 6 mm vertical clock phase 2 phase horizontal clock phase 2 phase output circuit two-stage mosfet source follower with load resistance x-ray resolution 4 to 6 lp/m m at 60 kvp, 20 gy - total dose irradiation 50 gy max. package 40 pin ceramic package *1: number of active pixels per chip. two chips are used. 1
ccd area image sensor s7199-01 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit storage temperature tstg -20 - +70 c operating temperature to p r 0 - +40 c od voltage v od -0.5 - +20 v rd voltage v rd -0.5 - +18 v isv voltage v isv -0.5 - +18 v igv voltage v igv -15 - +15 v igh voltage v igh -15 - +15 v sg voltage v sg -15 - +15 v og voltage v og -15 - +15 v rg voltage v rg -15 - +15 v tg voltage v tg -15 - +15 v vertical clock voltage v p1av , v p2av v p1bv , v p2bv -15 - +15 v horizontal clock voltage v p1ah , v p2ah v p1bh , v p2bh -15 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 - v reset drain voltage v rd 12 13 14 v output gate voltage v og -0.5 2 5 v output transistor ground voltage v ssa - 0 - v substrate voltage v ssd -5 0 - v vertical input source v isv - v rd - vertical input gate v igv -8 0 - test point horizontal input gate v igh -8 0 - v high v p1avh , v p2avh v p1bvh , v p2bvh 0 3 6 vertical shift register clock voltage low v p1avl , v p2avl v p1bvl , v p2bvl -9 -8 -7 v high v p1ahh , v p2ahh v p1bhh , v p2bhh 0 3 6 horizontal shift register clock voltage low v p1ahl , v p2ahl v p1bhl , v p2bhl -9 -8 -7 v high v sgh 0 3 6 summing gate voltage low v sgl -9 -8 -7 v high v rgh 0 3 6 reset gate voltage low v rgl -9 -8 -7 v high v tgh 0 3 6 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - 2 4 mhz reset clock frequency frg - 2 4 mhz vertical shift register capacitance c p1av , c p2av c p1bv, c p2bv - 15000 - pf horizontal shift register capacitance c p1ah , c p2ah c p1bh , c p2bh - 500 - pf summing gate capacitance c sg - 15 - pf reset gate capacitance c rg - 10 - pf transfer gate capacitance c tg - 500 - pf transfer efficiency cte * 2 0.99995 0.99999 - dc output level vout * 3 5 8 11 v output impedance zo * 3 - 500 - ? power dissipation p * 3, * 4 - 60 - mw *2: measured at half of the full well capacity. cte is defined per pixel. *3: v od =15 v. *4: power dissipation of the on-chip amplifier (each chip).
ccd area image sensor s7199-01 spacial frequency (line pair/mm) 0 0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 (x-ray source: 60 kvp) ctf 48 26 37 15 10 9 x-ray exposure (gy) 0 0 1000 500 (x-ray source: 70 kvp, filter: aluminum 4 mm t ) output voltage (mv) 20 40 10 30 3 electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol remark min. typ. max. unit saturation output voltage vsat - fw sv - v vertical 600 1200 - horizontal 600 1200 - full well capacity summing fw 600 1200 - ke - ccd node sensitivity sv * 2 0.45 0.6 - v/e - dark current (mpp mode) ds * 3 - 8 24 ke - /pixel/s ta=25 c - 90 - readout noise ta=-40 c nr * 4 - 60 120 e - rms dynamic range dr * 5 5000 20000 - x-ray response non-uniformity (s7199-01) xrnu * 6 photo response non-uniformity (s7199-01f) prnu * 7 - 10 30 % white spots - - 10 point defects * 8 black spots - - 10 cluster defects * 9 - - 0 blemish column defects - * 10 - - 0 - x-ray resolution (s7199-01) ? r 4 6 - lp/mm *2: v od =15 v. *3: dark current doubles for every 5 to 7 c. *4: operating frequency is 2 mhz. *5: dynamic range = full well capacity / readout noise *6: x-ray irradiation of 60kvp, measured at half of the full well capacity. xrnu (%) = signal peak) to (peak noise pattern fixed 100 measuring region that is within 146.0 mm (h) 6.0 mm (v) (refer to dimensional outline) *7: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 565 nm) prnu (%) = signal peak) to (peak noise pattern fixed 100 *8: white spots > 20 times of typ. dark signal (8 ke - /pixel/s). black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *9: continuous 2 to 9 point defects. *10: continuous >10 point defects. resolution (s7199-01) kmpdb0248ea response (s7199-01) kmpdb0249eb
ccd area image sensor s7199-01 4 device structure pixel format left horizontal direction right blank optical black isolation effective isolation optical black blank 0 0 0 1536 0 0 0 top vertical direction bottom isolation effective isolation 0 128 0 kmpdc0110ea ...... 1 2 3 4 5 6 234 125 126 127 128 s1 s2 s3 s4 s5 s6 s1531 s1532 s1533 s1534 s1535 s1536 ...... ...... 1531 1532 1533 1534 1535 1536 isv a14 a15 igv p1bv p2bv p1av p2av tg rg rd ssa os od og sg p2ah p1ah p2bh p1bh igh ssd ...... 1 2 3 4 5 6 234 125 126 127 128 s1 s2 s3 s4 s5 s6 s1531 s1532 s1533 s1534 s1535 s1536 ...... ...... 1531 1532 1533 1534 1535 1536 p2ah p1ah p2bh p1bh igh ssd left chip right chip s1, ... , s1536: active elements s1, ... , s1536: active elements a16 a17 a18 a19 a20 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 b1 b2 b3 b4 b5 b6 isv igv p1bv p2bv p1av p2av tg rg rd ssa os od og sg b7 b8 b9 b10 b11 b12 b13 b14 b15 b16 b17 b18 b19 b20 timing chart (tdi operation) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s2 s3 s1 s4 s5 s1535 s1536 tpwh, tpws kmpdc0142eb
ccd area image sensor s7199-01 5 timing chart (tdi operation, 2 2 pixel binning) p1av, p1bv p2av, p2bv tg p1ah, p1bh p2ah, p2bh sg rg os enlarged view tpwv to v r tpwr tg p1ah, p1bh p2ah, p2bh sg rg os s1 + s2 s3 + s4 s1535 + s1536 tpwh, tpws kmpdc0111ec parameter symbol remark min. typ. max. unit pulse width tpwv 30 60 - s p1av, p1bv, p2av, p2bv, tg rise and fall time tprv, tpfv * 14, * 15 200 - - ns pulse width tpwh 125 250 - ns rise and fall time tprh, tpfh 10 - - ns p1ah, p1bh, p2ah, p2bh duty ratio * 15 - 50 - % pulse width tpws 125 250 - ns rise and fall time tprs, tpfs 10 - - ns sg duty ratio - 50 - % pulse width tpwr 10 50 - ns rg rise and fall time tprr, tpfr 5 - - ns tg-p1ah, p1bh overlap time tovr 10 20 - s *14: tg terminal can be short-circuited to p2av terminal. *15: symmetrical pulses should be overlapped at 50 % of maximum amplitude.
ccd area image sensor s7199-01 6 kmpda0129eb 0.45 left chip edge pixel dead space: 130 to 200 m fop 150.0 0.2 149.5 0.5 b1 b13 28.0 0.3 75.0 0.4 75.0 0.4 x-ray sensitive area: 146.0 (h) 6.0 (v) a1 a13 fop 7.2 22.86 0.5 22.86 0.5 30.48 0.5 a20 a14 25.4 12.7 0.7 * fop 3.0 2.54 3.4 12.7 0.7 * * distance between the center of active area and the i/o pins b20 b14 50 m max. right chip 1.6 5.6 () 30.48 0.5 scintillator tdi direction dimensional outline (unit: mm) s7199-01 kmpda0282eb 0.45 left chip edge pixel dead space: 130 to 200 m fop 150.0 0.2 149.5 0.5 b1 b13 28.0 0.3 147.5 ccd active area: 146.0 (h) 6.0 (v) a1 a13 fop 7.2 22.86 0.5 22.86 0.5 30.48 0.5 a20 a14 25.4 12.7 0.7 * fop 3.0 2.54 3.4 12.7 0.7 * * distance between the center of active area and the i/o pins b20 b14 50 m max. right chip 1.6 5.2 () 30.48 0.5 tdi direction s7199-01f
ccd area image sensor s7199-01 7 pin connections pin no. symbol description remark a1 rg reset gate a2 rd reset drain a3 ssa analog ground a4 os output transistor source a5 od output transistor drain a6 og output gate a7 sg summing gate a8 p2ah ccd horizontal register clock a-2 a9 p1ah ccd horizontal register clock a-1 a10 ssd digital ground a11 p2bh ccd horizontal register clock b-2 same timing as p2ah a12 p1bh ccd horizontal register clock b-1 same timing as p1ah a13 igh test point (horizontal input gate) a14 isv test point (vertical input source) shorted to rd a15 igv test point (vertical input gate) a16 p1bv ccd vertical register clock b-1 same timing as p1av a17 p2bv ccd vertical register clock b-2 same timing as p2av a18 p1av ccd vertical register clock a-1 a19 p2av ccd vertical register clock a-2 a20 tg transfer gate b1 igh test point (horizontal input gate) b2 p1bh ccd horizontal register clock b-1 same timing as p1ah b3 p2bh ccd horizontal register clock b-2 same timing as p2ah b4 ssd digital ground b5 p1ah ccd horizontal register clock a-1 b6 p2ah ccd horizontal register clock a-2 b7 sg summing gate b8 og output gate b9 od output transistor drain b10 os output transistor source b11 ssa analog ground b12 rd reset drain b13 rg reset gate b14 tg transfer gate b15 p2av ccd vertical register clock a-2 b16 p1av ccd vertical register clock a-1 b17 p2bv ccd vertical register clock b-2 same timing as p2av b18 p1bv ccd vertical register clock b-1 same timing as p1av b19 igv test point (vertical input gate) b20 isv test point (vertical input source) shorted to rd precautions for use (electrostatic countermeasures) * handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band wit h an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs.
ccd area image sensor s7199-01 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information described in this material is current as of march, 2011. product specifications are subject to change without prior notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. cat. no. kmpd1077e11 apr. 2011 dn 8
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